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(111) InAs/GaInSb strained-layer superlattice growth investigation

โœ Scribed by D.A. Reich; A.M. Wowchak; P.P. Chow; J.M. Van Hove

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
271 KB
Volume
150
Category
Article
ISSN
0022-0248

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We have theoretically investigated the valence-band discontinuity \(\left(\Delta E_{v}\right)\) at the (100) GaAs/AlAs interface with the InAs strained insertion-layer. The theoretical calculation is carried out by the self-consistent tight-binding method with the \(s p^{3} s^{*}\) basis in the \((\