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Growth of InAsGaSb strained layer superlattices. II

โœ Scribed by G.R. Booker; P.C. Klipstein; M. Lakrimi; S. Lyapin; N.J. Mason; I.J. Murgatroyd; R.J. Nicholas; T.-Y. Seong; D.M. Symons; P.J. Walker


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
510 KB
Volume
146
Category
Article
ISSN
0022-0248

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๐Ÿ“œ SIMILAR VOLUMES


Growth of InAs/GaSb strained layer super
โœ G.R. Booker; P.C. Klipstein; M. Lakrimi; S. Lyapin; N.J. Mason; R.J. Nicholas; T ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 725 KB
MOVPE Growth and optical characterizatio
โœ L. Aigouy; N. Briot; D. Bouchara; T. Cloitre; M. di Blasio; B. Gil; J. Calas; O. ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 236 KB

We have grown \(\mathrm{ZnSe} / \mathrm{ZnS}\) superlattices using low pressure MOVPE. The superlattices were grown onto a relaxed \(\mathrm{ZnSe}\) buffer and were constituted of 45 periods. The well and barrier thicknesses were chosen from the calculation of critical thicknesses for coherent and f