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10 Gb/s tunable EA-modulated laser transmitters


Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
119 KB
Volume
14
Category
Article
ISSN
0961-1290

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A strained InGaAsP-InP multiple-quantum-well DFB laser monolithically integrated with electroabsorption modulator by ultralow-pressure (22 mbar) selective-area-growth is presented. The integrated chip exhibits superior characteristics, such as low threshold current of 19 mA, single-mode operation ar