β-NMR of 12B in Si: a low-dose implantation study
✍ Scribed by B. Fischer; W. Seelinger; H.-P. Frank; E. Diehl; K.-H. Ergezinger; B. Ittermann; F. Mai; K. Marbach; S. Weissenmayer; G. Welker; H.-J. Stöckmann; H. Ackermann
- Book ID
- 113284654
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 276 KB
- Volume
- 80-81
- Category
- Article
- ISSN
- 0168-583X
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Numerous experimental studies for near-surface analyses of B in Si have shown that the B distribution within the top few nanometers is distorted by secondary ion mass spectrometry (SIMS) depth profiling with O 2 -flooding or normal incidence O 2 bombardment. Furthermore, the presence of surface oxid
The availability of high-current implanters, now makes it possible to perform high-dose ion-implantations. By modifying the implant species, dose, energy and substrate temperature and by choosing the suitable thermal annealing conditions buried layers below a monocrystalline Si overlayer can be for