Zum Wachstum von AIII-BV-Halbleitern aus nichtstöchiometrischen Schmelzen (I) Wachstum von GaAs auf GaAs bei konstanter Temperatur

✍ Scribed by H.-J. Tietze; Dr. R. Andrae; Dozent Dr. E. Butter

• Publisher: John Wiley and Sons
• Year: 1971
• Tongue: English
• Weight: 499 KB
• Volume: 6
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.19710060605

✦ Synopsis

A method for the preparation of GaAs layers of different thickness on GaAs from solutions of Ga a t constant temperatures is described using inner cooling of t h c substrate holder by a gas flow. The dependence of the growth rate on the intensity of inner cooling, movement of the substrate holder, and on growth tcmperature is given and explained. Furtheron is shown that constitutional supercoolung can be avoided by means of EL suitable temperature profile and absence of periodic temperature fluctuations.