Photoluminescence properties of ZnO thin
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Tu Anh Trinh; In Seok Hong; Hwa Ryun Lee; Yong Sub Cho
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Article
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2009
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Elsevier Science
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English
β 388 KB
ZnO thin films on sapphire substrate were fabricated by ion implantation combined with thermal oxidation. A sapphire substrate was implanted with 50 keV zinc ions at 350 Β°C with a fluence of 1.5 Γ 10 17 ions cm Γ2 , then annealed in a tube furnace in oxygen ambient in 2 h at 650 Β°C. Photoluminescenc