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ZnO-Based n-Channel Junction Field-Effect Transistor With Room-Temperature-Fabricated Amorphous p-Type Gate

✍ Scribed by Schein, F.; von Wenckstern, H.; Frenzel, H.; Grundmann, M.

Book ID: 114572706
Publisher: IEEE
Year: 2012
Tongue: English
Weight: 273 KB
Volume: 33
Category: Article
ISSN: 0741-3106
DOI: 10.1109/led.2012.2187633

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