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Zn diffusion mechanism in n-GaAs/Zn-AlGaAs/Se-AlGaAs structures

โœ Scribed by N. Fujii; T. Kimura; M. Tsugami; T. Sonoda; S. Takamiya; S. Mitsui


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
381 KB
Volume
145
Category
Article
ISSN
0022-0248

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Time-resolved photoluminescence measurements in ฮด-doped GaAs/AlGaAs on the quantum well structures are performed to study effects of ionized impurities relaxation process of photoexcited carriers. It is theoretically shown that a thin quantum well with a ฮด-doping layer inserted in the barrier layer