IV-VI diluted magnetic semiconductor Ge[
IV-VI diluted magnetic semiconductor Ge[sub 1−x]Mn[sub x]Te epilayer grown by molecular beam epitaxy
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Fukuma, Y.; Goto, K.; Senba, S.; Miyawaki, S.; Asada, H.; Koyanagi, T.; Sato, H.
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Article
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2008
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American Institute of Physics
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English
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