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Zinc oxide thin film transistors with Schottky source barriers

✍ Scribed by Ma, Alex M.; Gupta, Manisha; Chowdhury, Fatema Rezwana; Shen, Mei; Bothe, Kyle; Shankar, Karthik; Tsui, Ying; Barlage, Douglas W.

Book ID
119373450
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
439 KB
Volume
76
Category
Article
ISSN
0038-1101

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## Abstract Stretchable and transparent thin film transistors (TFTs) with intrisically brittle oxide semiconductors are built using a wavy structural configuration that can provide high flexibility and stretchability. After device fabrication procedures including high temperature annealing, the oxi