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Stretchable, Transparent Zinc Oxide Thin Film Transistors

✍ Scribed by Kyungyea Park; Deok-Kyou Lee; Byung-Sung Kim; Haseok Jeon; Nae-Eung Lee; Dongmok Whang; Hoo-Jeong Lee; Youn Jea Kim; Jong-Hyun Ahn

Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
643 KB
Volume
20
Category
Article
ISSN
1616-301X

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✦ Synopsis

Abstract

Stretchable and transparent thin film transistors (TFTs) with intrisically brittle oxide semiconductors are built using a wavy structural configuration that can provide high flexibility and stretchability. After device fabrication procedures including high temperature annealing, the oxide semiconductor‐based TFT arrays can be transferred directly to plastic or rubber substrates, without an additional device process, using transfer printing methods. This procedure can avoid some of the thermal degradation problems associated with plastic or rubber substrates by separating them from the annealing procedure needed to improve the device performance. These design and fabrication methods offer the possibility of developing a new format of stretchable electronics.

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