## Abstract We report a simple method, oblique angle deposition, to directly synthesize aligned Ge nanowire arrays on a Si substrate. This process is accomplished by tilting the Si substrate and adjusting the incident angle of the evaporated Ge vapor flux with respect to the substrate normal to 87ยฐ
Zinc oxide nanowire based field emitters
โ Scribed by Sivakumar Ramanathan; Yu-chun Chen; Yonhua Tzeng
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 665 KB
- Volume
- 43
- Category
- Article
- ISSN
- 1386-9477
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โฆ Synopsis
We report the field emission properties of 50 nm diameter ZnO nanowires that were electrochemically self-assembled within pores of an anodic alumina film. Current versus voltage measurements of the Fowler-Nordheim tunneling current indicate that the turn-on field is 15 V mm ร 1 and the field enhancement factor b calculated for two sets of samples turned out to be 670 and 1481, respectively (theoretical value for b in bulk ZnO is 205). The enhancement in b is most likely due to the large aspect ratio of the nanowires. Variation in the length of the nanowires causes the screening effect, which increases the turn-on field and reduces the emission current density. The current-voltage characteristics of the wires are non-linear and show a rectifying behavior.
๐ SIMILAR VOLUMES
Bicrystalline ZnO nanowires synthesized are composed of two crystals that form a twin structure parallel to the (0 1 1 4) plane with a growth direction closely parallel to [0 1 1 1] and the (2 1 1 0) side facet. The twin structure is suggested to be a key factor in leading the axial growth of the na