๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Bicrystalline zinc oxide nanowires

โœ Scribed by Ying Dai; Yue Zhang; Yuan Qiang Bai; Zhong Lin Wang


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
394 KB
Volume
375
Category
Article
ISSN
0009-2614

No coin nor oath required. For personal study only.

โœฆ Synopsis


Bicrystalline ZnO nanowires synthesized are composed of two crystals that form a twin structure parallel to the (0 1 1 4) plane with a growth direction closely parallel to [0 1 1 1] and the (2 1 1 0) side facet. The twin structure is suggested to be a key factor in leading the axial growth of the nanowire. The photoluminescence spectra of the nanowires show a weak UV emission at 385 nm and a strong green emission at 495 nm. The green emission intensity of the nanowires depends on the different level of oxygen vacancies in the ZnO nanowires.


๐Ÿ“œ SIMILAR VOLUMES


Bicrystalline Silicon Nanowires
โœ A. H. Carim; K.-K. Lew; J. M. Redwing ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 175 KB
Solution-Grown Zinc Oxide Nanowires
โœ Lori E. Greene; Benjamin D. Yuhas; Matt Law; David Zitoun; Peidong Yang ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› John Wiley and Sons โš– 8 KB
Transition-Metal Doped Zinc Oxide Nanowi
โœ Benjamin D. Yuhas; David O. Zitoun; Peter J. Pauzauskie; Rongrui He; Peidong Yan ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 266 KB ๐Ÿ‘ 1 views
Transition-Metal Doped Zinc Oxide Nanowi
โœ Benjamin D. Yuhas; David O. Zitoun; Peter J. Pauzauskie; Rongrui He; Peidong Yan ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 265 KB ๐Ÿ‘ 1 views
Zinc oxide nanowire based field emitters
โœ Sivakumar Ramanathan; Yu-chun Chen; Yonhua Tzeng ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 665 KB

We report the field emission properties of 50 nm diameter ZnO nanowires that were electrochemically self-assembled within pores of an anodic alumina film. Current versus voltage measurements of the Fowler-Nordheim tunneling current indicate that the turn-on field is 15 V mm ร€ 1 and the field enhance