Zinc diffusion in tellurium doped gallium antimonide

✍ Scribed by G.J. Conibeer; A.F.W. Willoughby; C.M. Hardingham; V.K.M. Sharma

• Book ID: 103960063
• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 294 KB
• Volume: 6
• Category: Article
• ISSN: 0925-3467
• DOI: 10.1016/0925-3467(96)00021-3

✦ Synopsis

Zinc diffusion into tellurium doped gallium antimonide, GaSb, has been carried out as a function of time, temperature and antimony over-pressure. Total zinc profiles as well as cartier concentration profiles have been measured. Results indicate an inverse dependence of the diffusivity on antimony over-pressure and favour an interstitial-substitutional vacancy [F.C. Frank and D. Turnbull, Phys. Rev. 104 ( 1956) 617] or kick-out [U. GiSsele and F. Morehead, J. Appl. Phys. 52 (1981) 4617] mechanism. Furthermore, at high zinc concentrations, the profiles indicate an additional component associated with a non-electrically active zinc species which has a small, strongly temperature dependent diffusion coefficient.