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Indirect gap luminescence from tellurium-doped gallium antimonide

โœ Scribed by M.I.A. Gallant; H.M. van Driel


Book ID
103373597
Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
273 KB
Volume
32
Category
Article
ISSN
0038-1098

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Zinc diffusion into tellurium doped gallium antimonide, GaSb, has been carried out as a function of time, temperature and antimony over-pressure. Total zinc profiles as well as cartier concentration profiles have been measured. Results indicate an inverse dependence of the diffusivity on antimony ov