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XRR and XPS studies of SiO2 thin films formed by r.f. magnetron sputtering

✍ Scribed by Kojima, Isao; Li, Boquan; Fujimoto, Toshiyuki

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
136 KB
Volume
28
Category
Article
ISSN
0142-2421

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✦ Synopsis

Grazing-incidence x-ray reflectivity has been exploited to study as-grown SiO 2 thin films deposited on Si(100) substrates by radio-frequency (r.f.) magnetron sputtering under various substrate temperatures and gas flow conditions. Results indicate that an increase of substrate temperature from room temperature to 763 K only slightly decreases the surface roughness. Comparatively, the surface morphology is strongly controlled by the gas flow conditions during deposition. The surface roughness increases almost linearly from 0.51 to 2.38 nm as the argon gas flow is increased from 8 to 50 sccm. The chemical state and composition of the films were analysed by XPS.

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