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XPS study of the Y/SiOx interface at room temperature

✍ Scribed by R. Reichl; K. H. Gaukler

Publisher
John Wiley and Sons
Year
1990
Tongue
English
Weight
334 KB
Volume
15
Category
Article
ISSN
0142-2421

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✦ Synopsis

Abstract

The reducing reaction of vapour‐deposited yttrium layers on silicon oxide was measured by XPS at room temperature. The redox reaction was confined essentially to the deposition period. The thickness of the insulating SiO~x~ layer decreases by ∼0.2–0.3 nm. No further reaction during the 8 h following deposition could be observed.

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XPS study of the Sc/SiOx interface at ro
XPS study of the Sc/SiOx interface at room temperature
✍ R. Reichl; K. H. Gaukler πŸ“‚ Article πŸ“… 1991 πŸ› John Wiley and Sons 🌐 English βš– 313 KB

## Abstract The reducing reaction of vapour‐deposited scandium layers on silicon oxide at room temperature has been investigated using XPS. The redox reaction took place during the deposition period and diminished the thickness of the silicon oxide layer by ∼ 0.3 nm. No further reaction during the