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XPS study of the Sc/SiOx interface at room temperature

✍ Scribed by R. Reichl; K. H. Gaukler

Publisher
John Wiley and Sons
Year
1991
Tongue
English
Weight
313 KB
Volume
17
Category
Article
ISSN
0142-2421

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✦ Synopsis

Abstract

The reducing reaction of vapour‐deposited scandium layers on silicon oxide at room temperature has been investigated using XPS. The redox reaction took place during the deposition period and diminished the thickness of the silicon oxide layer by ∼ 0.3 nm. No further reaction during the 8 h following deposition was detected.

πŸ“œ SIMILAR VOLUMES

XPS study of the Y/SiOx interface at roo
XPS study of the Y/SiOx interface at room temperature
✍ R. Reichl; K. H. Gaukler πŸ“‚ Article πŸ“… 1990 πŸ› John Wiley and Sons 🌐 English βš– 334 KB

## Abstract The reducing reaction of vapour‐deposited yttrium layers on silicon oxide was measured by XPS at room temperature. The redox reaction was confined essentially to the deposition period. The thickness of the insulating SiO~__x__~ layer decreases by ∼0.2–0.3 nm. No further reaction during