Due to its outstanding electrical and mechanical properties, silicon carbide (SiC) is considered a leading semiconducting material for high temperature sensors. Since the piezoresistive effect in SiC is highly anisotropic and exhibits a dependence on the crystal orientation, the role of the substra
โฆ LIBER โฆ
XPS and ARXPS investigations of ultra thin TaN films deposited on SiO2 and Si
โ Scribed by M. Zier; S. Oswald; R. Reiche; K. Wetzig
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 323 KB
- Volume
- 252
- Category
- Article
- ISSN
- 0169-4332
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