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Xe-implanted zirconium oxycarbide studied by variable energy positron beam

✍ Scribed by N. Djourelov; G. Gutierrez; H. Marinov; E. Popov; N. Toulhoat; N. Moncoffre; Y. Pipon; P. Nédélec

Book ID
113823644
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
543 KB
Volume
269
Category
Article
ISSN
0168-583X

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✍ J. Keinonen; E. Rauhala; J. Räisänen; K. Saarinen; P. Hautojärvi; C. Corbel 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 260 KB

Ion-beam and low-energy positron-beam techniques have been used to study damage and implanted ion distributions and their annealing behavior in semi-insulating GaAs after the room temperature implantation of 3 × 10~-1 x 10 ~7 60 keV H' cm -'. The redistribution of the implanted H during annealing wa