X-ray topographic studies of the melting of nearly perfect gallium crystals
β Scribed by Dr. G. Mair; Prof. Dr. H. Wenzl
- Publisher
- John Wiley and Sons
- Year
- 1976
- Tongue
- English
- Weight
- 286 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0232-1300
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β¦ Synopsis
Abstract
The temperature dependence of the concentration and shape of long dislocation lines in pure, nearly perfect gallium crystals has been measured by Xβray topography in anomalous transmission (Borrmannβtopography). The dislocation structure did not change appreciably between temperatures of 22Β°C and at least 0.1 mK below the melting point T~m~ = 29.75Β°C. A few dislocations decreased their length due to tempering at the melting point. Preβmelting effects could not be detected.
π SIMILAR VOLUMES
## Abstract Using the modified method of limited Xβray topographs the distribution of defects along the silicon dendritic thickness was investigated. It is found that there are two dislocation sources in the given crystals, one of which acts near the surface and generates the loopβshaped dislocatio