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X-ray photoelectron spectroscopic studies of β-sialons

✍ Scribed by T. Hagio; A. Takase; S. Umebayashi


Publisher
Springer
Year
1992
Tongue
English
Weight
259 KB
Volume
11
Category
Article
ISSN
0261-8028

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Three new sulphur-passivation techniques of GaAs surfaces are presented to solve the problem of longevity and durability. To explore the passivation mechanism, XPS in conjunction With other techniques are employed to study the chemical compositions of Ga and As atoms near the passivation filmlsubstr