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X-ray Photoelectron Spectroscopic Studies of Sulphur-passivated GaAsSurfaces

✍ Scribed by Wang, Xun; Hou, Xiao-Yuan; Li, Zhe-Shen; Chen, Xi-Ying


Publisher
John Wiley and Sons
Year
1996
Tongue
English
Weight
473 KB
Volume
24
Category
Article
ISSN
0142-2421

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✦ Synopsis


Three new sulphur-passivation techniques of GaAs surfaces are presented to solve the problem of longevity and durability. To explore the passivation mechanism, XPS in conjunction With other techniques are employed to study the chemical compositions of Ga and As atoms near the passivation filmlsubstrate interfaces.


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