An investigation of the X-ray photoelectron spectra of single crystals of SrLaAlO 4 grown at various oxygen pressures is reported. Light yellow crystals were obtained at pressure of oxygen lower than about 5Γ10 -4 atm while green colored crystals at oxygen pressure higher than 5Γ10 -3 atm. The obtai
X-ray Photoelectron Spectroscopic Studies of Sulphur-passivated GaAsSurfaces
β Scribed by Wang, Xun; Hou, Xiao-Yuan; Li, Zhe-Shen; Chen, Xi-Ying
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 473 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0142-2421
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β¦ Synopsis
Three new sulphur-passivation techniques of GaAs surfaces are presented to solve the problem of longevity and durability. To explore the passivation mechanism, XPS in conjunction With other techniques are employed to study the chemical compositions of Ga and As atoms near the passivation filmlsubstrate interfaces.
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