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X-ray Kβ- and L2,3-emission bands of pure silicon and silicon in MoSi compounds

✍ Scribed by V.V. Nemoshkalenko; A.P. Shpak; V.P. Krivitsky; L.I. Nikolajev

Publisher
Elsevier Science
Year
1973
Tongue
English
Weight
128 KB
Volume
45
Category
Article
ISSN
0375-9601

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X-ray absorption spectra of Si, SiO and SiOt in the Si K edge region are presented. They reveal a strong influence of the type of silicon bond on the structure of the absorption spectra situated towards high energies of the edge. These spectra show that the SiO oxide cannot be taken as a mixture of