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X-ray irradiation of silicon detectors

✍ Scribed by V. Chmill

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
210 KB
Volume
566
Category
Article
ISSN
0168-9002

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✦ Synopsis

Silicon pad detectors were irradiated with a 30 kVp X-ray energy spectrum and the change in capacity and dark current was measured as a function of radiation dose and restoring time. After irradiation of the detectors the parameters were monitored and the time to get back to the baseline before irradiation was measured. The relaxation process of the detector functionality (the recovery of the characteristics) was observed with bias voltage applied to the detectors.

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