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X-ray emission and photoluminescence spectroscopy of nanostructured silica with implanted copper ions

✍ Scribed by D. A. Zatsepin; V. S. Kortov; É. Z. Kurmaev; N. V. Gavrilov; R. G. Wilks; A. Moewes


Book ID
111446312
Publisher
SP MAIK Nauka/Interperiodica
Year
2008
Tongue
English
Weight
250 KB
Volume
50
Category
Article
ISSN
1063-7834

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## Abstract An X‐ray Si __L__~2,3~‐emission spectroscopy study of a SiO~2~/n‐Si heterostructure containing a thin oxide layer of __d__ = 20 nm thickness implanted by Si^+^ ions with an energy 12 keV is reported. The maximum concentration of implanted Si^+^ ions is located close to the SiO~2~–Si int