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X-ray determination of strain in ion implanted GaN

✍ Scribed by S.B. Qadri; B. Molnar; M. Yousuf; C.A. Carosella


Book ID
114165461
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
109 KB
Volume
190
Category
Article
ISSN
0168-583X

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High resolution X-ray diffraction analys
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## Abstract High resolution triple‐axis X‐ray diffraction has been used to characterize the effects of nitrogen ion implantation into thin (15 nm and 55 nm) AlN buffer layers on the resultant structural quality of nominally 2 ΞΌm epitaxial GaN layers grown on silicon substrates. The GaN symmetric (0