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WSi Schottky diodes: effect of sputtering deposition conditions on the barrier height

✍ Scribed by M. Mamor; E. Dufour-Gergam; L. Finkman; G. Tremblay; F. Meyer; K. Bouziane

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
355 KB
Volume
91
Category
Article
ISSN
0169-4332

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Effects of chemical treatment on barrier
Effects of chemical treatment on barrier height and ideality factors of Au/GaN Schottky diodes
✍ M. Diale; F.D. Auret πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 193 KB

We have studied Au/n-GaN Schottky barrier diodes. GaN surfaces have been prepared by cleaning in HCl and (NH 4 ) 2 S prior to metal deposition. The zero-biased barrier heights and ideality factors obtained from the current-voltage characteristics differ from diode to diode, although all the samples