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World record for silicon light emission


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
114 KB
Volume
16
Category
Article
ISSN
0961-1290

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We report on the fabrication and performances of extremely e cient Si-based light sources. The devices consist of MOS structures with erbium (Er) implanted in the thin gate oxide. The devices exhibit strong 1:54 m electroluminescence (EL) at 300 K with a 10% external quantum e ciency, comparable to