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[Widerkehr & Associates 1996 Symposium on VLSI Technology. Digest of Technical Papers - Honolulu, HI, USA (11-13 June 1996)] 1996 Symposium on VLSI Technology. Digest of Technical Papers - Mechanisms and characteristics of oxide charge detrapping in n-MOSFETs

✍ Scribed by Tahui Wang, ; Tse-En Chang, ; Lu-Ping Chiang, ; Chimoon Huang, ; Guo, J.C.

Book ID: 118002472
Publisher: Widerkehr & Associates
Year: 1996
Weight: 215 KB
Volume: 0
Category: Article
ISBN-13: 9780780333420
DOI: 10.1109/vlsit.1996.507862

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