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Wide-range, low-operating-voltage, bimorph STM: Application as potentiometer

✍ Scribed by P. Muralt; D. W. Pohl; W. Denk


Book ID
126695310
Publisher
IBM
Year
1986
Tongue
English
Weight
815 KB
Volume
30
Category
Article
ISSN
0018-8646

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Wide operating voltage range and low pow
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A testable design of dynamic random-access memory (DRAM) architecture which allows one to access multiple cells in a word line simultaneously is presented. The technique utilises the two-dimensional (2-D) organisation of the DRAM and the resulting speedup of the conventional algorithm is considerabl