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Wide band gap silicon carbon nitride films deposited by electron cyclotron resonance plasma chemical vapor deposition

โœ Scribed by K.H Chen; J.-J Wu; C.Y Wen; L.C Chen; C.W Fan; P.F Kuo; Y.F Chen; Y.S Huang


Book ID
114086816
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
563 KB
Volume
355-356
Category
Article
ISSN
0040-6090

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Silicon nitride films of various compositions have been deposited on silicon substrate by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) technique from mixtures of Ar, N and SiH as precursors. Film 2 4 composition and refractive index as a function of deposition p