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Wide band gap ferromagnetic semiconductors and oxides

โœ Scribed by Pearton, S. J.; Abernathy, C. R.; Overberg, M. E.; Thaler, G. T.; Norton, D. P.; Theodoropoulou, N.; Hebard, A. F.; Park, Y. D.; Ren, F.; Kim, J.; Boatner, L. A.


Book ID
119993933
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
501 KB
Volume
93
Category
Article
ISSN
0021-8979

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Effects of defects and doping on wide ba
โœ S.J Pearton; C.R Abernathy; G.T Thaler; R Frazier; F Ren; A.F Hebard; Y.D Park; ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 427 KB

Both ion implantation and epitaxial crystal growth provide convenient methods of introducing transition metals such as Mn,Cr,Fe,Ni and Co into GaN, GaP, SiC and ZnO for creating dilute magnetic semiconductors exhibiting room temperature ferromagnetism. In this paper we review progress in wide band g