Effects of defects and doping on wide band gap ferromagnetic semiconductors

✍ Scribed by S.J Pearton; C.R Abernathy; G.T Thaler; R Frazier; F Ren; A.F Hebard; Y.D Park; D.P Norton; W Tang; M Stavola; J.M Zavada; R.G Wilson

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 427 KB
• Volume: 340-342
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2003.09.003

✦ Synopsis

Both ion implantation and epitaxial crystal growth provide convenient methods of introducing transition metals such as Mn,Cr,Fe,Ni and Co into GaN, GaP, SiC and ZnO for creating dilute magnetic semiconductors exhibiting room temperature ferromagnetism. In this paper we review progress in wide band gap ferromagnetic semiconductors and the role of defects and doping on the resulting magnetic properties.