Wide Band Gap Electronic Materials

✍ Scribed by Galina Popovici, M. A. Prelas (auth.), Mark A. Prelas, Peter Gielisse, Galina Popovici, Boris V. Spitsyn, Tina Stacy (eds.)

• Publisher: Springer Netherlands
• Year: 1995
• Tongue: English
• Leaves: 522
• Series: NATO ASI Series 1
• Edition: 1
• Category: Library

✦ Synopsis

Wide Band Gap Electronic Materials covers topics including electronic doping of diamond, n-type diamond, negative electron affinity of diamond, applications of aluminum nitride, the doping of boron nitride, wide band gap electronic applications, and nanophase diamond.
One of the highlights is the description of an energy sub-band due to defects in the diamond lattice, responsible for a diamond LED which can emit red, green and blue light. Revolutionary nanostructure devices are also described, such as nanostructure transistors. It is also shown how aluminum nitride can be used in acoustic, piezo and electroluminescent devices.
Nanophase diamond particles having a narrow size distribution around 4 nm can be created by an explosive shock wave, and these can be used as seeds for growing smooth diamond films, as additives in composite materials, for nanophase electronic devices, and as the basis for superior lubricants.
Other problems covered include the heteroepitaxy of diamond films, doping of aluminum nitride, and the growth of large crystals of boron nitride.

✦ Table of Contents

Front Matter....Pages i-xv
Problems of n-type Diamond Doping. Forced Methods of Doping....Pages 1-13
Diffusion of Boron, Hydrogen, Oxygen and Lithium in Single Crystalline and Polycrystalline Diamond. A Novel Method for the Determination of the State of an Impurity: Forced Diffusion of Boron in IA Type Natural Diamond....Pages 15-29
Chemical Aspects of Diamond Doping....Pages 31-45
Diamond Growth by Hot Carbon Filament Chemical Vapor Deposition....Pages 47-51
Diamond Particles on Silicon Tips: Preparation, Structure, and Field Emission Properties....Pages 53-62
To the Question of the Diamond Nuclei’s Formation from the Gas Phase....Pages 63-68
Electrically and Optically Active Impurities and Defects in Diamond....Pages 69-80
Prediction of Diamond Film Thermal Conductivity....Pages 81-88
Spectral Hole-Burning Study of the Defects Created by Neutron Irradiation in a Natural Diamond....Pages 89-96
Calculations of Phosphorous Electronic Levels in Diamond....Pages 97-103
Hydrogen Chemistry on Diamond Surfaces....Pages 105-114
Surface and Bulk Conductivity of Hydrogen Treated Polycrystalline Diamond....Pages 115-121
Positron Annihilation in Diamond Films....Pages 123-127
ESR Study of the Paramagnetic Defects in Free Standing Diamond Films....Pages 129-135
Efficient Reduction of Nitride and Nitrate to Ammonia Using B-Doped Diamond Electrodes....Pages 137-142
Electronic and Sensing Properties of Diamond....Pages 143-160
Diamond MIS Capacitors with Silicon Dioxide Dielectric....Pages 161-170
Diamond Photovoltaics: Characterization of CVD Diamond Film-Based Heterostructures for Light to Electricity Conversion....Pages 171-185
Laser Modes in Diamond....Pages 187-206
Advanced Applications of Diamond Electronics....Pages 207-217
Laser-Assisted Chemical Etching of Diamond Films in Oxygen....Pages 219-224
Ion Milling of Polycrystalline Diamond Films....Pages 225-234
Doping of Diamond-Like Carbon Films....Pages 235-242
Unhydrogenated DLC Films Obtained by Magnetron Sputtering....Pages 243-248
Simulation of Diffusion in an Amorphous Structure....Pages 249-256
Optical and Electrical Properties of Quantum-Dimensional Multilayer Structures Based on Carbon FLLMS....Pages 257-264
Thermal Stability and Structural Reactions at the Tantalum /a-C Interface under Vacuum Annealing Conditions....Pages 265-270
Extended and Localized Electronic States in Tetrahedral Carbon Films....Pages 271-283
Optical Properties of Sputtering and Glow Discharge a-C:H Films....Pages 285-290
Application of Amorphous Hydrogenated Carbon Coating to Semiconductor Radiation Detectors....Pages 291-296
Device for Growing and Doping in the Growth Process of Thin A1N Films....Pages 297-303
Peculiarities of Chemical Vapor Heteroepitaxy of Wideband GAP III-V Nitrides....Pages 305-311
The Peculiarities of Cubic Boron Nitride Formation Mechanism Using Hexa-Ammoniacate Boron Hydride of Magnesium....Pages 313-319
Investigation of Cubic Boron Nitride Crystallization Processes in the BN-Li 3 N-(H, N) System....Pages 321-327
Epitaxial Growth of A1N by Plasma Source Molecular Beam Epitaxy....Pages 329-334
Electronic Structure and Related Properties of Tetrahedrally Bonded Wide-Band-Gap Materials Containing Early Elements of the Periodic Table....Pages 335-372
Ion Implantation into Wide Band Gap Semiconductors....Pages 373-376
Thermodynamic Properties of Boron Nitride....Pages 377-392
Electrical Conductivity of Ceramics Based on Different Boron Nitride Modifications....Pages 393-396
Cathodoluminescent Investigation of External Factors Influence on Defective Cubic Boron Nitride Structure....Pages 397-400
Macro and Micro Structural Factors in Thin Film Growth of III-V Compounds....Pages 401-419
The Features of the Sintering Process under High Pressure of Aluminium Nitride Ceramic with High Thermal Conductivity....Pages 421-426
Reactive Ion Etching of Silicon Carbide with Fluorine-Containing Plasmas....Pages 427-430
1.54-µm Photoluminescence from Er-Implanted A1N & GaN....Pages 431-435
AES-SIMS Analitical System for Composition Measurements of Wide Band Gap Semiconductors....Pages 437-445
Positron Annihilation in Sintered Boron Nitride....Pages 447-452
Wide Band Gap Electronic Devices....Pages 453-461
Wide Band-Gap Photovoltaics....Pages 463-474
Considerations in Further Development of Aluminum Nitride as a Material for Device Applications....Pages 475-486
Theoretical Aspects of Aluminium Nitride and Diamond in View of Laser and Photovoltaic Action....Pages 487-509
Back Matter....Pages 511-531

✦ Subjects

Optical and Electronic Materials; Characterization and Evaluation of Materials; Physical Chemistry