Processing of Wide Band Gap Semiconductors. Growth, Processing and Applications

✍ Scribed by Stephen J. Pearton (Eds.)

Publisher: William Andrew
Year: 2000
Tongue: English
Leaves: 576
Category: Library

No coin nor oath required. For personal study only.

✦ Table of Contents

Content:
Preface, Pages vii-ix, Stephen J. Pearton
Contributors, Pages xi-xii
1 - Doping Limits and Bandgap Engineering in Wide Gap II–VI Compounds, Pages 1-41, Wolfgang Faschinger
2 - Epitaxial Growth of II–VI Compounds by MOVPE, Pages 42-79, Wolfgang Gebhardt, Berthold Hahn
3 - Ohmic Contacts to II–VI and III–V Compound Semiconductors, Pages 80-150, Tae-Jie Kim, Paul H. Holloway
4 - Dry Etching of SiC, Pages 151-177, Joseph R. Flemish
5 - Processing of Silicon Carbide for Devices and Circuits, Pages 178-249, Jeffrey B. Casady
6 - Plasma Etching of III–V Nitrides, Pages 250-299, Randy J. Shul
7 - Ion Implantation in Wide Bandgap Semiconductors, Pages 300-353, John C. Zolper
8 - Rare Earth Impurities in Wide Gap Semiconductors, Pages 354-392, John M. Zavada
9 - SIMS Analysis of Wide Bandgap Semiconductors, Pages 393-428, Robert G. Wilson
10 - Hydrogen in Wide Bandgap Semiconductors, Pages 429-505, Stephen J. Pearton, Jewor W. Lee
11 - Diamond Deposition and Characterization, Pages 506-542, Donald R. Gilbert, Rajiv K. Singh
Index, Pages 543-571

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