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White light luminescence from nano-ZnS doped porous silicon

✍ Scribed by Cheah, K W; Xu, Ling; Huang, Xinfan

Book ID
120994854
Publisher
Institute of Physics
Year
2002
Tongue
English
Weight
297 KB
Volume
13
Category
Article
ISSN
0957-4484

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actants with argon as the carrier gas. Growth time varied from 0.5 to 2.0 h, so as to obtain different thickness of films. ZnO nanoneedle arrays were prepared on Si substrates at the same growth temperature using the same MOCVD system [7]. Prior to the nanoneedle growth, no metal catalyst was deposi