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Er/Yb Doped Porous Silicon — A Novel White Light Source.

✍ Scribed by Li Luo; Xiao Xia Zhang; King Fai Li; Kok Wai Cheah; Jian Xin Shi; Wai Kwok Wong; Meng Lian Gong

Book ID
101969258
Publisher
John Wiley and Sons
Year
2004
Weight
8 KB
Volume
35
Category
Article
ISSN
0931-7597

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Er/Yb Doped Porous Silicon—A Novel White
Er/Yb Doped Porous Silicon—A Novel White Light Source
✍ L. Luo; X. X. Zhang; K. F. Li; K. W. Cheah; J. X. Shi; W. K. Wong; M. L. Gong 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 153 KB

actants with argon as the carrier gas. Growth time varied from 0.5 to 2.0 h, so as to obtain different thickness of films. ZnO nanoneedle arrays were prepared on Si substrates at the same growth temperature using the same MOCVD system [7]. Prior to the nanoneedle growth, no metal catalyst was deposi