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Wet etching of sputtered tantalum thin films in NaOH and KOH based solutions

✍ Scribed by S. Sood; R. Peelamedu; K. B. Sundaram; E. Dein; R. M. Todi


Publisher
Springer US
Year
2006
Tongue
English
Weight
369 KB
Volume
18
Category
Article
ISSN
0957-4522

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Aluminum oxide (Al 2 O 3 ) thin films are synthesized by reactive d.c. magnetron sputter deposition on silicon substrates. The impact of varying plasma power P p (i.e. 400 to 1000 W) and of thin film temperatures T up to 540 Β°C on the electrical performance are evaluated, as these dielectric layers