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Wet Etching of Ion-Implanted Silicon Dioxide Monitored by Atomic-Force Microscopy

✍ Scribed by A. A. Bukharaev; N. I. Nurgazizov; A. V. Sugonyako

Book ID
110328208
Publisher
Springer
Year
2002
Tongue
English
Weight
168 KB
Volume
31
Category
Article
ISSN
1063-7397

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✍ G. JΓ€ger-Waldau; H.-U. Habermeier; G. Zwicker; E. Bucher πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 278 KB

Reactive ion etching and reactive ion beam etching are common anisotropic etch processes in silicon microdevice fabrication. Unfortunately, they are also known to create electrically active defects in the bulk material. It is possible to detect these active defects with the electron-beam-induced cur