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Dry and wet etching properties of thermally grown silicon dioxide layer after N+ ion implantation and annealing

✍ Scribed by Kazuhiro Kudo; Shigekazu Kuniyoshi; Kuniaki Tanaka


Book ID
113283536
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
244 KB
Volume
80-81
Category
Article
ISSN
0168-583X

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