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Well-posedness of the Hydrodynamic Model for Semiconductors

✍ Scribed by Li-Ming Yeh


Publisher
John Wiley and Sons
Year
1996
Tongue
English
Weight
824 KB
Volume
19
Category
Article
ISSN
0170-4214

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✦ Synopsis


Communicated by B. Brosowski

This paper concerns the well-posedness of the hydrodynamic model for semiconductor devices, a quasilinear elliptic-parbolic-hyperbolic system. Boundary conditions for elliptic and parabolic equations are Dirichlet conditions while boundary conditions for the hyperbolic equations are assumed to be well-posed in L 2 sense. Maximally strictly dissipative boundary conditions for the hyperbolic equations satisfy the assumption of well-posedness in L2 sense. The well-posedness of the model under the boundary conditions is demonstrated.

AY = -(n -Z ( x ) ) ,


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