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Well-coupling and band-mixing effects on differential gain of coupled quantum wells

✍ Scribed by M. Kucharczyk; M. S. Wartak

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
164 KB
Volume
21
Category
Article
ISSN
0895-2477

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✦ Synopsis

function using GaAs MEFETrHEMT or Si NMOS technologies, and its lower sensitivity to common-mode components of the inputs even allows the use of single-ended input signals, which is not possible with the original topology.

A model has been found to compare the proposed topology and the original one. The model is based on a secondorder best fit for the Ids᎐Vgs relationship of the device, and allows us to calculate the Fourier coefficients of the differential output voltage of the multiplier cell. We have compared the two topologies using the IAF DPD᎐QW 0.3 m HEMT technology, obtaining a good agreement between the calculated results and the simulated ones.

REFERENCES

  1. B. Gilbert, A precise four quadrant multiplier with subnanosec-Ε½ .

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