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Weak localisation and correlation effects in a two dimensional hole gas in Si/Si1−xGex heterostructures

✍ Scribed by R. Cheung; L.J. Geerligs; J. Caro; A.H. Verbruggen; K. Werner; S. Radelaar


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
163 KB
Volume
194-196
Category
Article
ISSN
0921-4526

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The hole wavefunctions, the energy levels and the sheet density of a strained p-Si/Si 1-x Ge x /p-Si selectively doped double heterojunction are investigated at T = 0 K, solving the Schrödinger and Poisson equations self-consistently. We present a systematic study taking into account all the modulat