## Abstract We present true green InGaN ridge waveguide (RWG) laser diodes (LDs) at 520 nm on c‐plane GaN substrates in pulse operation at room temperature. Defect reduction in the In‐rich quantum wells by improving growth conditions of the epitaxial layers is the key parameter to demonstrate laser
Waveguide design of green InGaN laser diodes
✍ Scribed by Lermer, Teresa ;Schillgalies, Marc ;Breidenassel, Andreas ;Queren, Désirée ;Eichler, Christoph ;Avramescu, Adrian ;Müller, Jens ;Scheibenzuber, Wolfgang ;Schwarz, Ulrich ;Lutgen, Stephan ;Strauss, Uwe
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 403 KB
- Volume
- 207
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
In this paper we investigate the waveguiding (WG) of direct green InGaN laser diodes grown on c‐plane GaN substrates. The problem of parasitic modes emerges due to the reduced refractive index difference between the GaN waveguide and AlGaN cladding layers for green compared to blue emitting laser diodes. We discuss several approaches to avoid substrate modes. We investigate different materials and designs for optimized WG of green InGaN laser diodes using a 1D transfer matrix simulation tool.
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## Abstract InGaN quantum wells for direct green lasers with indium concentrations of about 30% are studied in respect to defect structure and influence of defects on device lifetime. A new test structure enables us to determine strain relaxation in In‐rich layers by X‐ray diffraction even at typic
The performance characteristic of continuous-wave (cw) InGaN multiple-quantum-well (MQW) laser diodes with optimized design parameters is reported. Room temperature, cw operation of InGaN MQW laser diodes was demonstrated with threshold current densities as low as 7 kA/cm 2 and emission wavelength n