CW Operation of InGaN MQW Laser Diodes

✍ Scribed by Bour, D.P. ;Kneissl, M. ;Van de Walle, C.G. ;Northrup, J. ;Romano, L.T. ;Teepe, M. ;Wood, R. ;Schmidt, T. ;Johnson, N.M.

• Publisher: John Wiley and Sons
• Year: 2000
• Tongue: English
• Weight: 166 KB
• Volume: 180
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200007)180:1<139::aid-pssa139>3.0.co;2-n

✦ Synopsis

The performance characteristic of continuous-wave (cw) InGaN multiple-quantum-well (MQW) laser diodes with optimized design parameters is reported. Room temperature, cw operation of InGaN MQW laser diodes was demonstrated with threshold current densities as low as 7 kA/cm 2 and emission wavelength near 400 nm. For 2 mm  300 mm ridge waveguide nitride laser with reflection-coated mirrors cw threshold currents of 60 mA have been obtained. CW operation was observed up to temperatures of 60 C. The transverse and lateral optical modes of nitride lasers, toward optimization of the layer structure and ridge waveguide parameters have been analyzed. Incorporation of a thick, superlattice n-cladding layer led to a considerable improvement in the transverse beam quality. Thermal modeling indicated the importance of lowering the diode voltage and efficient heat dissipation; and specifically, the benefit of thinning the sapphire substrate for achieving room temperature cw operation.