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Wave-mechanical study of gate tunneling leakage reduction in ultra-thin (<2 nm) dielectric MOS and H-MOS devices

✍ Scribed by E. Cassan; P. Dollfus; S. Galdin

Book ID: 117144721
Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 248 KB
Volume: 280
Category: Article
ISSN: 0022-3093
DOI: 10.1016/s0022-3093(00)00355-0

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