✦ LIBER ✦

Wafer bonding of gallium arsenide on sapphire

✍ Scribed by P. Kopperschmidt; G. Kästner; S. Senz; D. Hesse; U. Gösele

Publisher: Springer
Year: 1997
Tongue: English
Weight: 434 KB
Volume: 64
Category: Article
ISSN: 1432-0630
DOI: 10.1007/s003390050512

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Displacement of bonding charge in galliu

Displacement of bonding charge in gallium arsenide

✍ Bashenov, V. K. ;Fistul, V. I. ;Foigel, M. G. 📂 Article 📅 1971 🏛 John Wiley and Sons 🌐 English ⚖ 162 KB

High-quality YBa2Cu3O7films on 4-in. Waf

High-quality YBa2Cu3O7films on 4-in. Wafers of sapphire, gallium arsenide, and silicon

✍ W. Prusseit; B. Utz; P. Berberich; H. Kinder 📂 Article 📅 1994 🏛 Springer 🌐 English ⚖ 215 KB

Coulometric determination of arsenic in

Coulometric determination of arsenic in gallium arsenide crystal wafers

✍ M. Cullen; J.M.P. Mearns 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 390 KB

The determination of small variations in the stoichiometry of undoped, semi-insulating gallium arsenide can be achieved by using constant current coulometly. Samples taken from a wafer are etched in HF, dissolved in NaOH-peroxide solution, then treated with a citric acid buffer. To convert the arsen

Development of a gate metal etch process

Development of a gate metal etch process for gallium arsenide wafers

✍ Rahul Bammi; Timothy S. Cale; Gordon Grivna 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 598 KB

Infrared characterization of an epitaxia

Infrared characterization of an epitaxial film of gallium arsenide on a gallium arsenide substrate

✍ E.D. Palik; R.T. Holm; J.W. Gibson 📂 Article 📅 1977 🏛 Elsevier Science 🌐 English ⚖ 535 KB

Mechanism of arsenic incorporation growt

Mechanism of arsenic incorporation growth of gallium arsenide on gallium-covered surfaces

✍ Naoharu Sugiyama; Yasutomo Kajikawa 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 513 KB