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W-band low-noise InAlAs/InGaAs lattice-matched HEMTs

✍ Scribed by Chao, P.C.; Tessmer, A.J.; Duh, K.-H.G.; Ho, P.; Kao, M.-Y.; Smith, P.M.; Ballingall, J.M.; Liu, S.-M.J.; Jabra, A.A.

Book ID
118231296
Publisher
IEEE
Year
1990
Tongue
English
Weight
360 KB
Volume
11
Category
Article
ISSN
0741-3106

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Carrier-concentration-dependent low-fiel
Carrier-concentration-dependent low-field-mobility model for InAlAs/InGaAs/InP lattice-matched HEMT for microwave application
✍ Jyotika Jogi; Sujata Sen; Mridula Gupta; R. S. Gupta 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 168 KB

## Abstract A carrier‐concentration‐dependent low‐field‐mobility model for a lattice‐matched InAlAs/InGaAs/InP HEMT for microwave frequency applications is developed. The dependence of mobility on carrier concentration affects the current–voltage characteristics, and also the gate–voltage dependenc