Volume and surface self-diffusion measurements on copper by thermal surface smoothing
β Scribed by Hoehne, K. ;Sizmann, R.
- Book ID
- 105366962
- Publisher
- John Wiley and Sons
- Year
- 1971
- Tongue
- English
- Weight
- 687 KB
- Volume
- 5
- Category
- Article
- ISSN
- 0031-8965
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The self-diffusion mechanisms of single adatoms on the Cu(l70) surface have been studied using molecular dynamics simulation and a many-body potential within the second-moment approximation of the tightbinding model. From a detail trajectory analysis we found a variety of diffusion mechanisms, the h
Diffusion barrier materials, TiN and WN, were deposited by atomic layer deposition (ALD). The chlorine concentration of the TiN film was as low as 1.2 at.-%, and resistivity was below 200 lX cm. Ultra high aspect ratio (AR = 85) trenches were used to assess step coverage. Tungsten nitride film, depo